Characterization of a Geiger-mode Avalanche Photodiode
نویسنده
چکیده
A 32 by 32 array of packaged 100 μm Geiger-mode avalanche photodiodes were tested and characterized. A breakdown voltage of 32 V was measured; at or just above this voltage is where the device should be biased in order to operate in Geiger-mode. The ideal region of the forward biased IV curve resulted in an ideality factor of 1.0 and no recombination/generation region. In addition, IDL code was written to acquire, analyze and reduce an afterpulsing experiment. After looking at the data no afterpulsing was seen in this device. This can be attributed to the fact that there is no recombination/generation region meaning there are a minimal amount of traps in the device.
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تاریخ انتشار 2015